http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2513620-C1

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3bc58dc80fa1570790328af40904bc37
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D133-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K13-02
filingDate 2012-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f11fdb2c7d604f07d85a6c59cd07dec4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1bedd1d6d01ecf90986dc27c7a97b1f0
publicationDate 2014-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber RU-2513620-C1
titleOfInvention Composition for photoactivated etching of silicon dioxode films
abstract FIELD: chemistry. n SUBSTANCE: invention can be used in producing integrated microcircuits and other electronic devices which use a planar manufacturing technique based on photolithographic processes. The composition for photoactivated etching of silicon dioxide films includes a polymer base - polymethyl methacrylate, a photosensitive component - ammonium fluoride in trifluoroacetic acid solution, a solvent - acetone, a protophilic agent - diphenylamine. n EFFECT: invention simplifies the process of producing a photoetched pattern on a silicon layer, increases the rate of photoetching and significantly reduces defects in the obtained articles. n 1 tbl, 4 ex
priorityDate 2012-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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