http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2499081-C2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1fd0db26645f006a911622d1886de41c |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B28-12 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45563 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-027 |
| filingDate | 2009-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f3121230bc794d36afffe21141a2515 |
| publicationDate | 2013-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | RU-2499081-C2 |
| titleOfInvention | Systems and methods to distribute gas in reactor for chemical deposition from steam phase |
| abstract | FIELD: machine building. n SUBSTANCE: reactor for chemical deposition of polycrystalline silicon includes a reaction chamber, comprising a support board fixed in the reaction chamber, and a jacket connected to the support board for formation of the deposition chamber, a filament element attached to the support board, a source of electric current for supply of current to the filament element, a source of silicon-containing gas connected with the reaction chamber to create the flow of silicon-containing gas via the reaction chamber and the vertical pipe, connected to the source of silicon-containing gas, for introduction of the flow of silicon-containing gas into the reaction chamber. The vertical pipe is made as capable of receiving deposits of polycrystalline silicon in the reaction chamber. n EFFECT: improved flow of gas in all volume of a reaction chamber, which makes it possible to increase yield of polycrystalline silicon, improved quality of polycrystalline silicon and reduced energy consumption. n 22 cl, 4 dwg |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2717620-C2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016036274-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2717450-C2 |
| priorityDate | 2008-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.