http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2485621-C1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdb7605a49f9b484bc420bc8bffb319b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 |
| filingDate | 2011-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b69577b92a7a1ca86f2187c5b17996fa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a06c665101907a50ecf51fbd265bceba http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_521c0f2a7c6f997e51133cc8d3152899 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_72f4689965f9abdd15a814ada78eb290 |
| publicationDate | 2013-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | RU-2485621-C1 |
| titleOfInvention | Method for manufacture of powerful uhf transistor |
| abstract | FIELD: electrical engineering. n SUBSTANCE: method for manufacture of a powerful UHF transistor includes formation of the topology of at least one transistor crystal on the semiconductor substrate face side, formation of the transistor electrodes, formation of at least one protective dielectric layer along the whole of the transistor crystal topology by way of plasma chemical application, the layer total length being 0.15-0.25 mcm, formation of the transistor crystal size by way of lithography and chemical etching processes. Prior to formation of the transistor crystal size, within the choke electrode area one performs local plasma chemical etching of the protective dielectric layer to a depth equal to the layer thickness; immediately after that one performs formation of protectively passivating dielectric layers of silicon nitride and diozide with thickness equal to 0.045-0.050 mm; plasma chemical application of the latter layers and the protective dielectric layer is performed in the same technological modes with plasma power equal to 300-350 W, during 30-35 sec and at a temperature of 150-250°C; during formation of the transistor crystal size ne performs chemical etching of the protectively passivating dielectric layers and the protective dielectric layer within the same technological cycle. n EFFECT: increased power output and augmentation ratio or powerful transistors with their long-term stability preservation. n 4 cl, 1 dwg, 1 tbl |
| priorityDate | 2011-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.