http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2398922-C2

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filingDate 2006-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2010-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd76712db45eb7cc28a62e0a697a90d3
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publicationDate 2010-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber RU-2398922-C2
titleOfInvention Colourless monocrystalline diamond obtained via high-growth rate chemical gas-phase deposition
abstract FIELD: chemistry. n SUBSTANCE: method involves controlling temperature of a diamond growth surface so that all temperature gradients on the said surface do not exceed 20 єC, and growth of a monocrystalline diamond on the said surface through chemical gas-phase deposition in a microwave plasma at growth temperature in a deposition chamber, the atmosphere of which contains approximately 8-20% CH 4 per unit H 2 and approximately 5-25% O 2 per unit CH 4 . Diamonds larger than 10 carat may be obtained using the method, which is the subject of the present invention. n EFFECT: faster diamond growth. n 29 cl, 1 ex, 11 dwg
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2763103-C1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2638220-C2
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Total number of triples: 28.