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filingDate 2004-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2005-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2005-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber RU-2261502-C1
titleOfInvention Photo-luminescent emitter, semiconductor element and optron based on said devices
abstract FIELD: spectral-analytical, pyrometric and thermal-vision equipment. n SUBSTANCE: emitter has electro-luminescent diode of gallium arsenide, generating primary emission in wave length range 0,8-0,9 mcm, and also poly-crystal layer of lead selenide, absorbing primary emission and secondarily emitting in wave length range 2-5 mcm, and lead selenide includes additionally: admixture, directionally changing emission maximum wave length position as well as time of increase and decrease of emission pulse, and admixture, increasing power of emission. Photo-element includes lead selenide layer on dielectric substrate with potential barrier formed therein, and includes admixtures, analogical to those added to lead selenide of emitter. Optron uses emitter and photo-elements. Concentration of addition of cadmium selenide in poly-crystal layer of emitter is 3,5-4,5 times greater, than in photo-element. Open optical channel of Optron is best made with possible filling by gas or liquid, and for optimal synchronization and compactness emitter and/or photo-element can be improved by narrowband optical interference filters. n EFFECT: higher efficiency, broader functional capabilities. n 3 cl, 3 tbl, 6 dwg
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2457580-C2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2627565-C1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2642132-C1
priorityDate 2004-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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