http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2256957-C2
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-21 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01L27-00 |
| filingDate | 2004-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98b563ebb954aea063c5b2657abc5db8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3bfd8e82fd3b588fed76291badbd241 |
| publicationDate | 2005-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | RU-2256957-C2 |
| titleOfInvention | Memory cell |
| abstract | FIELD: computer science. n SUBSTANCE: memory cell, containing three-layer structure, including two electrodes, between which a functional zone is located, as electrodes metal and/or semiconductor and/or conducting polymer and/or conducting and optically transparent oxide or sulfide are used, and functional zone is made of organic, metal-organic and non-organic materials with different types of active elements built in molecular and/or crystalline structure, and also their combinations with each other and/or clusters on their basis, which change their condition or position under effect from outside electrical field and/or light radiation. n EFFECT: higher efficiency, broader functional capabilities, higher manufacturability. n 25 cl, 24 dwg |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2618959-C2 |
| priorityDate | 2001-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.