| abstract |
FIELD: measurement of physico-mechanical parameters of media, nondestructive inspection of diagnosed objects. SUBSTANCE: nanotransmitter has sensitive element- monocrystalline silicon probe coated with layer of noble metal. Polycrystalline silicon membrane with corrugations over edges that is coated with layer of noble metal on side of probe is placed under probe with gap between fractions of nanometer to fractions of micrometer. Probe is connected to source of input voltage. Nanotransmitter incorporates device controlling gap, deflecting electrode made of noble metal and arranged around probe, tunnel current amplifier, analog-to-digital converter, unit measuring electric capacitance, unit limiting tunnel current. Process of manufacture of tunnel nonotransmitter is based on use of methods of planar semiconductor technology. EFFECT: increased sensitivity of tunnel nanotransmitter, reduced inherent noise, enlarged dynamic range for ultrasonic examinations, diminished radiation level, potential for exposure of microstructural disturbances in diagnosed objects. 2 cl, 2 dwg |