http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2110116-C1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3d2a642c00a4784a839495850bfa0bff http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_970cc2a908a46523488351512841ab08 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate | 1996-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1998-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6cef7bcd9bc4c5bccdce4b14c378f265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d7a73ac3e169bb1ab25fd12a9d6ddf5 |
| publicationDate | 1998-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | RU-2110116-C1 |
| titleOfInvention | Method of detection of structural defects in silicon crystals |
| abstract | FIELD: semiconductor technology. SUBSTANCE: for detection of structural defects in crystals crystal surface is irradiated with flux of alpha particles from radionuclide source with dose (1,2-7,2)•10 12 cm -2 , then surface is subjected to chemical etching in solution that acts selectively on defects and finally detected defects are fixed in ring area embracing irradiation zone. EFFECT: enhanced authenticity of method. 1 tbl |
| priorityDate | 1996-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.