http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2110112-C1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3d2a642c00a4784a839495850bfa0bff http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_970cc2a908a46523488351512841ab08 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 |
| filingDate | 1996-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1998-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e4f4e5c9567abc7792e00365a6194c1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3798d5496a3edf1cb6f6e088004752ba |
| publicationDate | 1998-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | RU-2110112-C1 |
| titleOfInvention | Process of formation of film elements on base of platinum |
| abstract | FIELD: electronics, microelectronics. SUBSTANCE: process of formation of film elements on base of platinum includes deposition of metal-oxide adhesive layer and layer of platinum on substrate with oxygen-free dielectric coat, photolithographic making of configuration of elements. Adhesive layer is deposited by sputtering of titanium in oxygen-carrying plasma starting from pressure ratios /p=0.3-0.4 and finishing at , where is oxygen pressure; p is overall pressure of mixture. After deposition of layer of platinum vacuum annealing is performed to recovery of platinum dioxide to platinum and lower oxides. On formation of configuration of elements substrate is subjected to annealing in oxygen-carrying atmosphere. EFFECT: increased productivity and reliability of process. |
| priorityDate | 1996-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.