| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_416e08be9bb5636ad42f49567fd13503 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-05 |
| filingDate |
1992-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1996-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc6489927b74624fa4dfc654b72139fc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97ab9fe982b1f9dbb9de60d272d6cc83
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35180e57fc37b52a50519766654c6cb4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09728560ce5c6ac34be54b9dfc2398b4 |
| publicationDate |
1996-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
RU-2069921-C1 |
| titleOfInvention |
Heterojunction photodetector |
| abstract |
FIELD: light beam recording and measuring. SUBSTANCE: photodetector has single-crystalline silicon substrate covered with As 4 S 3 polycrystalline layer and two contacts; aluminium contact is deposited on As 4 S 3 layer and contact made of aluminium, chromium, or tellurium, on opposite side of silicon substrate. EFFECT: improved design. 2 dwg |
| priorityDate |
1992-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |