| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5a67c7969146b001acb72a66e2e6a9e1 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
1993-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1995-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae0200502d9fe501434fc78a5745858f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c3071045aabcbfcd9c54bd3db3eb65d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f103e2dad29deb75e76eec21a326e7e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e55d9a8e8c7b2f99bb3c9e19e16397e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7cdcc0d1715fcde40c917dc4d0c00bc |
| publicationDate |
1995-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
RU-2046451-C1 |
| titleOfInvention |
Solution to etch layers of indium sulfide |
| abstract |
FIELD: opticoelectronic instrumentation engineering. SUBSTANCE: etching solution includes hydrogen chloride, acetic acid and water. It can be used for etching dielectric layers on semiconductor substrate through photoresistive mask. Composition of solution, per cent by mass, is: hydrogen chloride 0.2-4.0; water 0.4-10.0, acetic acid 90.0-99.4. EFFECT: improved efficiency of formation of multilayer thin-film structures. 1 tbl |
| priorityDate |
1993-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |