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publicationDate 1995-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber RU-2038841-C1
titleOfInvention Method of production of filter medium from silicon dioxide for cleaning of gases and liquids
abstract FIELD: semiconductors. SUBSTANCE: vapors of SiCl 4 or SiHCl 3 are introduced in the oxydric torch flame, the formed particles of SiO 2 are precipitated on the base of coarsely porous quartz, and sintering is performed at a temperature of 900 to 1300 C. The total time of thermal treatment in the precipitation and sintering stages is 5 to 100 minutes. EFFECT: facilitated procedure. 2 tbl
priorityDate 1988-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 31.