abstract |
FIELD: semiconductors. SUBSTANCE: vapors of SiCl 4 or SiHCl 3 are introduced in the oxydric torch flame, the formed particles of SiO 2 are precipitated on the base of coarsely porous quartz, and sintering is performed at a temperature of 900 to 1300 C. The total time of thermal treatment in the precipitation and sintering stages is 5 to 100 minutes. EFFECT: facilitated procedure. 2 tbl |