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filingDate 2020-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber RU-203663-U1
titleOfInvention Semiconductor device based on passivated organo-inorganic perovskite
abstract The utility model relates to the physics and technology of semiconductor devices, namely, to a semiconductor device based on organic-inorganic perovskite, capable of operating as a solar cell or light-emitting diode, and can be used in energy, industry and other fields. A semiconductor device based on a passivated organo-inorganic perovskite consists of an anode, a hole transport layer, a passivated perovskite layer, an electronic transport layer, a hole-blocking layer and a cathode, while in the passivated perovskite layer the halide of the first or second cation is in excess in the amount of 2 % up to 25% by weight. The technical result of this utility model is a semiconductor device based on passivated perovskite with improved parameters. This device shows the best values of photoluminescence quantum yield, photoluminescence lifetime and efficiency, and also demonstrates the shift of the electroluminescence peak to the visible region.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/SE-2250096-A1
priorityDate 2020-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 28.