http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2033658-C1

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
filingDate 1993-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1995-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0ad2487007d7488745f1989d30c843d
publicationDate 1995-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber RU-2033658-C1
titleOfInvention Etching agent for chemical smoothing of substrates of cadmium telluride
abstract FIELD: semiconductor devices. SUBSTANCE: etching agent includes following components, per cent by mass: chrome oxide 2.0-15.0; sulfamic acid 10.0-20.0; water being the balance. EFFECT: expended range of application of etching agent.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2627711-C1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2619423-C1
priorityDate 1993-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 23.