http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2013158689-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3511 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-385 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0066 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-94 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02355 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate | 2012-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | RU-2013158689-A |
| titleOfInvention | LIGHT-RADIATING DEVICE ATTACHED TO THE SUPPORT |
| abstract | 1. A structure comprising: a support substrate comprising a body and a plurality of through holes passing through the entire thickness of the body; and a semiconductor light emitting device comprising a light emitting layer arranged between the n-type region and the p-type region, the semiconductor light-emitting device being connected to the support substrate by a dielectric connecting layer; wherein the support substrate is no wider than the semiconductor light-emitting device. 2. The structure of claim 1, wherein the n-type region is indented from the edge of the semiconductor light-emitting device. The structure according to claim 2, which further comprises a polymer layer located between the edge of the n-type region and the edge of the semiconductor light-emitting device. The structure of claim 1, further comprising a metal contact located on an n-type region. The structure of claim 4, wherein the metal contact extends along the side wall at the edge of the n-type region. The structure of claim 4, wherein: the metal contact is indented from the edge of the n-type region; a reflective dielectric structure is placed on the outer part and the side wall of the n-type region. 7. The structure of claim 1, wherein the connecting layer comprises a plurality of metal regions separated by at least one dielectric region. A structure according to claim 7, in which a plurality of through holes passing through the entire thickness of the body open up a plurality of metal regions. The structure of claim 1, wherein the connecting layer comprises a polymer. The structure of claim 9, wherein a plurality of through holes passing through the entire thickness of the body extend |
| priorityDate | 2011-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758 |
Total number of triples: 29.