http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2010146265-A
Outgoing Links
Predicate | Object |
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classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-265 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 |
filingDate | 2009-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2012-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | RU-2010146265-A |
titleOfInvention | DEVICE FOR THERMAL HYDRAULIC APPLICATION WITH IMPROVED PROPERTIES OF WATER SOFTENING AND LOW ISSUE OF HEAVY METALS AND METHOD FOR ITS MANUFACTURE |
abstract | 1. Device for thermohydraulic use, characterized in that at least one part of the surface intended for contact with water is coated with a film containing at least one layer of material deposited by polymerization in plasma of one or more silicon-containing monomers. ! 2. Device according to claim 1, characterized in that said silicon-containing monomers selected from hexamethyldisiloxane, 3-glycidoxypropyltrimethoxysilane, tetramethylsilane, tetraethoxysilane, phenyltrimethoxysilane, dimetoksimetilfenilsilana, tetraethoxysilane, 3-methacryloxypropyltrimethoxysilane, triethoxyvinylsilane, oktametiltsiklotetrasilana, methyltriethoxysilane, dietoksimetilfenilsilana, tris (2-methoxyethoxy ) vinylsilane, phenyltriethoxysilane, dimethoxyphenylsilane, tetramethyldisilazane, hexamethyldisilazane, diethoxymethyls ilane, ethyltrimethoxysilane, tetramethoxysilane, methyltrimethoxysilane, dimethoxymethylsilane, tetramethyldisiloxane, tetramethylethoxysilane, methyltrimethoxysilane, dimethyldimethoxysilane, trimethylmethoxysilane, tetraethylsilane and silane. ! 3. The device according to claim 1 or 2, characterized in that the coating material has the formula:! SiOxCyHzNw,! where 0.1≤x≤10, 0≤y≤10, 0≤z≤10, 0≤w≤10. ! 4. The device according to claim 3, characterized in that said film contains several layers of material of various compositions deposited by polymerization in plasma of one or more silicon-containing monomers. ! 5. The device according to claim 4, characterized in that said film contains a first layer with the formula SiOx, where x = 2, and a second layer having the formula SiOxCyHzNw. ! 6. The device according to claim 5, characterized in that said layer of material, nan |
priorityDate | 2008-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 68.