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filingDate 2008-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2011-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber RU-2009137396-A
titleOfInvention METHOD FOR PRODUCING A PHOTOELECTRIC DEVICE WITH RESISTANT TO RIPPING ANTI-REFLECTIVE COATING AND FINAL PRODUCT
abstract 1. A method of manufacturing a photovoltaic device containing an antireflection coating, including! forming a polymer component of silicon oxide by mixing at least glycidoxypropyltrimethoxysilane with at least a first solvent, a first catalyst and water,! forming a silica sol by mixing the polymer component with colloidal silica and a second solvent,! forming a metal oxide sol by mixing at least glycidoxypropyltrimethoxysilane with a metal oxide, a second catalyst and a third solvent,! formation of a combined sol-gel by mixing a silica sol with a metal oxide sol,! casting a combined sol-gel to form a layer on a glass substrate, curing and / or heat treating the layer, and using the resulting layer as at least part of an antireflection film on a glass substrate in a photovoltaic device. ! 2. The method according to claim 1, in which the curing is carried out at a temperature of from 100 to 150 ° C for no more than about 2 minutes ! 3. The method according to claim 1, in which the heat treatment is carried out at a temperature of from 600 to 750 ° C for no more than about 5 minutes ! 4. The method according to claim 1, in which (a) one or more of the first solvent, the second solvent and the third solvent contains (a) n-propanol, and / or (b) the casting is carried out by centrifugation. ! 5. The method according to claim 1, in which the first catalyst and / or second catalyst contain acid. ! 6. The method according to claim 5, in which the acid contains hydrochloric acid. ! 7. The method according to claim 1, in which colloidal silicon oxide contains
priorityDate 2007-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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