http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-188584-U1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82B3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-24 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82B3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-24 |
| filingDate | 2018-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | RU-188584-U1 |
| titleOfInvention | Device for the manufacture of nanometer transparent films |
| abstract | The invention relates to devices for the manufacture of nanometer transparent films of semiconductors, dielectrics and metal oxides and can be used for vacuum deposition of films of ZnS, ZnSe, MgF 2 , CaF 2 , SiO, GeO, WO 3 , MoO 3 , SnO 2 . The technical result of the proposed solution is to simplify the method of manufacturing nanometer transparent films. This technical result is achieved by the fact that the proposed device for the manufacture of nanometer transparent films containing a vacuum chamber, a radiation source, an evaporator material, a control substrate, an optical window of the vacuum chamber, a working substrate, while the radiation source of the visible wavelength range is installed inside the vacuum chamber below the plane of the hole of the evaporator material, and the control substrate, is located above the plane of the hole of the evaporator material and is available as for the deposition of evaporated mat rial, and for observing the surface through the optical window of the vacuum chamber, the control substrate is fixed on a cylindrical quartz member and is made of an iron foil. For the implementation of the process of manufacturing nanometer transparent films with thicknesses in the range of 9.6 รท 19.5 nm using the proposed device does not require the use of additional sophisticated equipment other than the traditional installation for producing thin films by the method of thermal vacuum deposition type UVN-2M1, in which the distance from the evaporator to working substrate is 250 mm. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2775978-C1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2761594-C1 |
| priorityDate | 2018-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.