http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RO-128642-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_240b864da168b0ce1e791da0f8130a72 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 |
| filingDate | 2011-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60c1b7632c5a6da45d52cf4e918416c5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9178eba8a47d27f0f2089f9f80fdd8ef |
| publicationDate | 2017-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | RO-128642-B1 |
| titleOfInvention | SEMICONDUCTOR MATERIAL INCORPORATED ON INN-BASED STRENGTH FOR OPTOELECTRONIC APPLICATIONS |
| abstract | The invention relates to semiconductor thin layers of InYNas monolayers deposited onto a rigid or flexible sublayer, adherent to the support whereon they were deposited, which may be used for making various optoelectronic devices. According to the invention, the thin layers are obtained by the method of magnetron sputtering into a reactive plasma comprising atoms and ions of indium, yttrium and nitrogen, the nitride materials consisting of a thin layer of InYN with a thickness ranging between 100...3000 nm, where 0.9 ≤ x ≤ 1.0 and 0 ≤ y ≤ 0.1, on the condition that 0.9 ≤ x+y ≤ 1.1, the materials thus obtained having high adherence to the sublayer, having an n type conduction, with the load carrier density ranging between 10...10cm, with Hall mobility of the load carriers ranging between 0.1...20 cm/Vs and photoluminiscence effect at the room temperature in the wave length range between 350...1400 nm. |
| priorityDate | 2011-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.