| abstract |
In the present invention there is disclosed a process technology for the manufacture of low temperature films of gasoline oxides, among others PBZRXTI1-XO3 (PZT) (<400 ° C for PZT) with suitable ferroelectric properties for the integration in devices. The method is also valid for the manufacture of ferocious films with bronchial structure of tungsten (A2B2O6), PEROVESQUITES (ABO3), PIROCLOROS (A2B2O7) AND BISMUTAL LAYERS (BI4TI3O12), IN WHICH AEB ARE MONO, BI, TRI- , TETRA- AND PENTAVALENTES. THIS INVENTION PROVIDES A METHOD FOR THE MANUFACTURE OF FERROELECTRIC, PIEZOELECTRIC, PYRELELECTRIC AND DIELECTRIC, DENSES AND NO FISSURE POLYCRYSTALLINE FINE FILMS WITH THICKNESS MORE THAN 50 NM AND BELOW 800 NM IN MONOCHRISTAL, POLYCYSTALINES, AMORPHES, METALLIC AND POLYMER SUBSTRATES AT LOW TEMPERATURES AND WITH OPTIMIZED PROPERTIES, USABLE IN THE MICROELECTRONIC AND OPTICAL INDUSTRIES. |