http://rdf.ncbi.nlm.nih.gov/pubchem/patent/PL-431562-A1

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filingDate 2019-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2020-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber PL-431562-A1
titleOfInvention A method of producing sinters from aluminum nitride nanopowder for electronics materials
abstract The subject of the application is a method for the production of sintered aluminum nitride nanopowder intended for electronics materials, consisting in the production of high purity aluminum nitride nanopowder in anaerobic conditions, and then its sintering in a high-temperature process. The method is characterized in that to the freshly prepared lithium dimethylamide LiN (CH3) 2 or lithium diethylamide LiN (C2H5) 2 is added in stoichiometric proportion aluminum chloride AlCl3 in a solvent, preferably hexane or hexane solution and diethyl ether, the concentration of the AlCl3 solution being is 5%, and after removal of the LiCl by-product and evaporation of the solvent, the reaction product is purified by sublimation at 110 ° C, at a pressure of 10 Pa, obtaining an organamamide form of an aluminum precursor in the form of tris (dimethylamide) aluminum [Al (N ( CH3) 2) 3] 2 or aluminum tris (diethylamide) [Al (N (C2H5) 2) 3] 2, which is reacted with liquid ammonia at -33 ° C for 4 hours and then heated in a flowing gas atmosphere ammonia, at a temperature of 800 - 1400 ° C, for a period of 1 to 20 hours. The obtained aluminum nitride nanopowder in the h-AIN hexagonal form with an average crystallite size of 10 - 20 nm is placed in a mold and sintered at a temperature of 600 - 1100 ° C, under a pressure of 3-11 GPa, for a period of 1 minute to 10 hours.
priorityDate 2019-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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