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filingDate 2002-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ecf6b61162466a22fab280a241bfbc3
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publicationDate 2017-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber PL-225427-B1
titleOfInvention The structure of the light-emitting device, especially for a semiconductor laser device
abstract A luminescent component which has a phosphor substrate having at least one element belonging to Group 13 (IUPAC 1989) and comprising a nitride represented by the general formula: XN wherein X is at least one element selected from among B, Al, Ga and In, a nitride represented by the general formula: XN:Y wherein X is at least one element selected from among B, Al, Ga and In, and Y is at least one element selected from among Be, Mg, Ca, Sr, Ba, Zn, Cd and Hg, or a nitride represented by the general formula: XN:Y, Z wherein X is at least one element selected from among B, Al, Ga and In, Y is at least one element selected from among Be, Mg, Ca, Sr, Ba, Zn, Cd and Hg, and Z is at least one element selected from among C, Si, Ge, Sn, Pb, O and S; and a method for preparing the luminescent component which comprises preparing the phosphor substrate by using supercritical ammonia, and forming a luminescent element on the substrate through vapor phase growth. The luminescent component has a wave length distribution for emitting a white light, and the like, and can be prepared in good yield.
priorityDate 2002-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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