| abstract |
A honeycomb structure 1 has a large number of through-holes 3 divided by partition walls 2 and extending in the axial direction, characterized in that the honeycomb structure contains a Si phase having a lattice constant controlled at 0.54302 to 0.54311 nm at room temperature. A process for producing the honeycomb structure 1, includes a firing step of firing a precursor of honeycomb structure, wherein the precursor contains a Si phase and the firing step is conducted using a furnace material free from any boron-containing compound. A process for producing the honeycomb structure 1, includes a firing step of firing a precursor of honeycomb structure, wherein a reduction percentage of Si content in Si phase after firing step relative to Si content in Si phase before firing step is suppressed at 10% by mass or less. Having an improved thermal conductivity, the honeycomb structure is superior in thermal shock resistance. <IMAGE> |