http://rdf.ncbi.nlm.nih.gov/pubchem/patent/NL-9002749-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cef1f43aa7ea51e6a592082d9f2a3103 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R27-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R27-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y35-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R27-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R27-20 |
| filingDate | 1990-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1992-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | NL-9002749-A |
| titleOfInvention | METHOD AND APPARATUS FOR RESISTANCE MEASUREMENTS ON A SEMICONDUCTOR ELEMENT. |
| abstract | The resistance or conductivity between two or more conductors which are placed against a semiconductor element is measured. In order to bring the contact resistance between the conductors and the element to and hold it at a predetermined value during measuring, the conductors are held at a constant distance and/or under constant pressure relative to the semiconductor element. The measurement takes place according to the Spreading Resistance Probe (SRP) technique. A tungsten thread of 20 micron diameter on which a point has been cut is used. A force is applied between the element and the conductor such that the element penetrates through the layer of natural oxide on the element. @(4pp Dwg.No.0/0). |
| priorityDate | 1990-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID425762086 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23964 |
Total number of triples: 17.