| abstract |
A magnetoelectric transducer comprising a group III-V compound semiconductor thin film 14 of 0.1 mu m to 10 mu m thickness formed as a magnetic field sensing portion on a substrate 12 overlaying an organic insulating layer 13, and a multilayer wire bonding electrode including an ohmic electrode 16 formed on a required area of the thin film and a hard metal layer 17 and a bonding layer 18 which are laminated on the ohmic electrode. |