http://rdf.ncbi.nlm.nih.gov/pubchem/patent/MY-177765-A

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filingDate 2014-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4d47da18fd2a25fc78651b45ddb7e1c
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publicationDate 2020-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber MY-177765-A
titleOfInvention Impurity-diffusing composition and method for producing semiconductor element
abstract A impurity-diffusing composition comprising (A) a polysiloxane represented by Formula (1) and (B) an impurity diffusion component. (In the formula, R1 represents an aryl group having 6 to 15 carbon atoms, and a plurality of R1 may be the same or different. R2 represents any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an acyl group having 2 to 6 carbon atoms, and an aryl group having 6 to 15 carbon atoms, and a plurality of R2 may be the same or different. R3 and R4 each represent any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 1 0 carbon atoms, and an acyl group having 2 to 6 carbon atoms, and a plurality of R3 and a plurality of R4 each may be the same or different. The ratio of n:m is 95:5 to 25:75.) Provided is a impurity-diffusing composition that is excellent in printability on a semiconductor substrate and impurity diffusibility thereinto, less prone to cracks during the process of firing and diffusion, and becomes, when fired, a fired film having sufficient masking properties for other impurity diffusion agents.
priorityDate 2013-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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