http://rdf.ncbi.nlm.nih.gov/pubchem/patent/MY-161218-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8e0bf0928b608797b70bbc2b91c7e52e |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D11-0047 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0048 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-08 |
filingDate | 2012-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e82d19c7fe263e92df99113f575926b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a307d0fdecad754d3692029fdc3cd86d |
publicationDate | 2017-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | MY-161218-A |
titleOfInvention | Use of surfactants having at least three short-chain perfluorinated groups rf for manufacturing integrated circuits having patterns with line-space dimensions below 50nm |
abstract | THE USE OF SURFACTANTS A, THE 1 % BY WEIGHT AQUEOUS SOLUTIONS OF WHICH EXHIBIT A STATIC SURFACE TENSION <25 MN/M, THE SAID SURFACTANTS A CONTAINING AT LEAST THREE SHORT-CHAIN PERFLUORINATED GROUPS RF SELECTED FROM THE GROUP CONSISTING OF TRIFLUOROMETHYL, PENTAFLUOROETHYL, 1-HEPTAFLUOROPROPYL, 2-HEPTAFLUOROPROPYL, HEPTAFLUOROISOPROPYL, AND PENTAFLUOROSULFANYL; FOR MANUFACTURING INTEGRATED CIRCUITS COMPRISING PATTERNS HAVING LINE-SPACE DIMENSIONS BELOW 50 NM AND ASPECT RATIOS >3; AND A PHOTOLITHOGRAPHIC PROCESS MAKING USE OF THE SURFACTANTS A IN IMMERSION PHOTORESIST LAYERS, PHOTORESIST LAYERS EXPOSED TO ACTINIC RADIATION, DEVELOPER SOLUTIONS FOR THE EXPOSED PHOTORESIST LAYERS AND/OR IN CHEMICAL RINSE SOLUTIONS FOR DEVELOPED PATTERNED PHOTORESISTS COMPRISING PATTERNS HAVING LINE-SPACE DIMENSIONS BELOW 50 NM AND ASPECT RATIOS >3. BY WAY OF THE SURFACTANTS A, PATTERN COLLAPSE IS PREVENTED, LINE EDGE ROUGHNESS IS REDUCED, WATERMARK DEFECTS ARE PREVENTED AND REMOVED AND DEFECTS ARE REDUCED BY REMOVING PARTICLES. |
priorityDate | 2011-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.