| abstract |
OF THE DISCLOSURE POROUS LOW DIELECTRIC CONSTANT COMPOSITIONS AND METHODS FOR MAKING AND USING SAME A POROUS ORGANOSILICATE GLASS (OSG) FILMI SI,OC,H,F,, WHERE 'J+W+X+Y+Z 5 1 00, V IS 1 0 TO 35 ATOMIC, W IS 1 0 TO 65 ATOMIC IS 5 TO 30 ATOMIC, Y IS 1 0 TO 50 ATORNICAND Z IS 0 TO 15 ATOMIC, HAS A SILICATE NETWORK WILH CARBON BONDS AS METHYL GROUPS (SI-CH3) AND CONTAINS PORES WITH DIAMETER LESS THAN 3NM EQUIVALENT SPHERICAL DIAMETER AND DIELECTRIC CONSTANT LESS THAN 2.7. A PRELIMINARY FILM IS DEPOSITED BY A CHEMICAL VAPOR DEPOSITION METHOD FROM ORGANOSILANE AND/OR ORGANOSILOXANE PRECURSORS, 10 AND INDEPENDENT PORE-FORMING PRECURSORS. POROGEN PRECURSORS FORM PORES WITHIN THE PRELIMINARY FILM AND ARE SUBSEQUENTLY REMOVED TO PROVIDE THE POROUS FILM. COMPOSITIONS. FILM FORMING KITS, INCLUDE ORGANOSILANE AND/OR ORGANOSILOXANE COMPOUNDS CONTAINING AT LEAST ONE SI-H BOND AND POROGEN PRECURSORS OF HYDROCARBONS CONTAINING ALCOHOL, ETHER, CARBONYL, CARBOXYLIC ACID, ESTER, NILRO, PRIMARY AMINE, SECONDARY AMINE, AND/OR TERTIARY 15 AMINE FUNCTIONALITY OR COMBINATIONS. |