| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4efee27937b4a512f45809fed5293747 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-249969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-21
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S257-913 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03B33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-26 |
| filingDate |
1998-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba437c0732e326b04d3e7766ee2c9fef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0968c2b9bfc3c85472677d8cd55ea8fc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3bf837d36b51f9f30820f1921827bda
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8da0d0c7820e719a9b8f71fa46ecdc6 |
| publicationDate |
2007-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
MY-132868-A |
| titleOfInvention |
Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
| abstract |
A PROCESS FOR HEAT-TREATING A SINGLE CRYSTAL SILICON WAFER TO INFLUENCE THE RECIPITATION BEHAVIOUR OF OXYGEN IN THE WAFER IN A SUBSEQUENT THERMAL PROCESSING STEP.THE WAFER HAS A FRONT SURFACE (3), A BACK SURFACE (5), AND A CENTRAL PLANE (7) BETWEEN THE FRONT AND BACK SURFACES.IN THE PROCESS, THE WAFER (1) IS SUBJECTED TO A HEAT-TREATMENT TO FORM CRYSTAL LATTICE VACANCIES (13), THE VACANCIES BEING FORMED IN THE BULK (11) OF THE SILICON.THE WAFER (1) IS THEN COOLED FROM THE TEMPERATURE OF SAID HEAT TREATMENT AT A RATE WHICH ALLOWS SOME, BUT NOT ALL, OF THE CRYSTAL LATTICE VACANCIES TO DIFFUSE TO THE FRONT SURFACE (3) TO PRODUCE A WAFER HAVING A VACANCY CONCENTRATION PROFILE IN WHICH THE PEAK DENSITY IS AT OR NEAR THE CENTRAL PLANE (7) WITH THE CONCENTRATION GENERALLY DECREASING IN THE DIRECTION OF THE FRONT SURFACE (3) OF THE WAFER.(FIG 1) |
| priorityDate |
1997-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |