| abstract |
THE INVENTION PROVIDES PHASE CHANGE MEDIA (94, 96; 194, 196; 294, 296) FOR OPTICAL STORAGE BASED ON SEMICONDUCTORS OF NITRIDES OF THE COLUMN III METALS. THE SURFACE OF THIN FILMS OF THESE WIDE BANDGAP SEMICONDUCTORS MAY BE METALLIZED (BY DESORPTION OF THE NITROGEN) BY IRRADIATING WITH PHOTONS OF ENERGY EQUAL TO, OR GREATER THAN THE BAND GAP OF THESE MATERIALS, AND WITH POWER DENSITIES BEYOND A CRITICAL THRESHOLD VALUE. AS A CONSEQUENCE OF SUCH WRITABLE METALLIZATION, THESE MATERIAL ARE EXCELLENT CANDIDATES FOR WRITE ONCE, READ MANY TIMES STORAGE MEDIA SINCE THE DIFFERENCES IN THE REFLECTIVITY BETWEEN THE METAL AND ITS CORRESPONDING WIDE GAP NITRIDE ARE VERY LARGE. FURTHERMORE, ONCE THE NITROGEN IS DESORBED, THE WRITTEN METALLIC PHASE CAN NO LONGER REVERT BACK TO THE NITRIDE PHASE AND HENCE THE MEDIA IS STABLE AND IS TRULY A WRITE-ONCE SYSTEM. ADDITIONAL ADVANTAGES OFFERED BY THESE MATERIALS OVER PRESENT DAY PHASE CHANGE MEDIA INCLUDE HIGHER DIFERRENCES IN REFLECTIVITY CONTRAST AND SUITABILITY FOR USE WITH SHORT WAVELENGTH LASER DIODES (460 NM AND LOWER) WHICH ARE EXPECTED TO BE INTRODUCED INTO OPTICAL RECORDING TECHNOLOGY IN THE NEXT 5 YEARS. THE BAND GAP OF ALLOYS OF NITRIDES OF COLUMN III METALS CAN BE TUNED BY CHANGING THE RELATIVE FRACTIONS OF THE COLUMN III METALS TO CONTINUOUSLY VARY THE BAND GAP SO AS TO BE COMPATIBLE WITH LASERS HAVING PHOTON ENERGIES WITHIN THE RANGE. THE LOW ABSORPTIVITY AND HANCE HIGH TRANSMISSITIVITY, AT THE APPROPRIATE RECORDING WAVELENGTH, OF THE STARTING PHASE ALSO OFFERS THE POTENTIAL APPLICATION OF THESE MATERIALS IN A MULTIPLE-RECORDING-LAYER FORMAT.(FIG. 1) |