http://rdf.ncbi.nlm.nih.gov/pubchem/patent/MX-PA01012893-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a8a9982b1666c54b5bf02d6c944891e4 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2209 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34313 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2231 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-223 |
| filingDate | 2000-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c1053853e6155ad2621ecc2e075ec49 |
| publicationDate | 2002-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | MX-PA01012893-A |
| titleOfInvention | LASER HIDDEN EDGE SEMICONDUCTOR WITH ALUMINUM FREE CONFINATION COAT. |
| abstract | A hidden flange semiconductor diode laser, preferably based on the GaAs and AlGaAs family of materials; the thin upper coating layer is superimposed with an etched aluminum-free retaining layer and an aluminum-free confinement layer, preferably GalnP, of conductivity type opposite to that of the upper coating layer; a ditch is formed in the confinement layer that extends down towards the etched retaining layer; Additional AlGaAs grow back into the opening to form a hidden flange; during regrowth, no aluminum is exposed on the bottom or on the sides of the opening; the confinement layer, preferably the crosslink coincides with the AlGaAs; the thin layer of recorded seal preferably has the same type of conductivity and the same band space as the AlGaAs that interleaves it; For lasers that produce shorter wavelength radiation, the aluminum content of the AlGaAs coating layers is increased and some aluminum is added to the confinement layer but in smaller amounts than to the coating layers. |
| priorityDate | 1999-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.