http://rdf.ncbi.nlm.nih.gov/pubchem/patent/MX-166664-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_64a087419e45ab14e307d2d9553d628a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-167 |
| filingDate | 1984-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a14b51c52d72e80e9833c3c73db40535 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_016d9674795b8f9c1ebbb084d850509d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b666043c4e4fa3bd8399548a72560e17 |
| publicationDate | 1993-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | MX-166664-B |
| titleOfInvention | PROCEDURE FOR THE PREPARATION OF DORATED AMORPHOUS SILICON FILMS |
| abstract | The present invention relates to a process for the preparation of films based on doped amorphous silicon, by the plasma decomposition of a gas mixture that includes silane and a doping gas, which comprises the steps of: introducing electrically conductive or insulating substrates to a chamber, it is evacuated and adjusted to a suitable temperature, then the silane gas is introduced into the chamber, at a desired flow, together with the flow of the doping gases or a combination of the same gases, the pressure of the chamber and is in contact with a plasma, characterized in that the doping gas is phosphate pentafluoride or boron trifluoride and in which the activation energies of the electrical conductivity of the amorphous silicon doped with less than 0.3 electron volts; the temperature on the main board is 350 degrees C or higher, during deposition and the plasma generator is adjusted for the maximum possible power dissipation. |
| priorityDate | 1984-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.