http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-980012467-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 |
| filingDate | 1997-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-980012467-A |
| titleOfInvention | Strong / High Dielectric Integrated Circuits and Fabrication Methods |
| abstract | The transistor on the silicon substrate is covered with an insulating layer. The conductive flag penetrates through the insulating layer to pass through the transistor drain. The lower electrode of the ferroelectric capacitor, which is in direct contact with the flag and the drain, is in contact with the flag. This ferroelectric layer is self-patterned and completely covers the memory cell. The self-patterned sacrificial protective film completely covers the ferroelectric layer. The lower electrode of the capacitor is completely surrounded by a ferroelectric layer, an insulating layer and a conductive flag. The sacrificial protective layer is a compound of a metal selected from Ta, Hf, W, Nb and Zr, or one or more metals selected from Ti, Ta, Hf, W, Nb, and Zr and Sr, Ca, Ba, Cd And a composite metal compound containing one or more metals selected from Pb, and for example, strontium tantalate, tantalum oxide, strontium bismuth tantalate bismuth, strontium tantalate, strontium silconate, and nioff Strontium acid, tantalum nitride, or tantalum oxynitride. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100886007-B1 |
| priorityDate | 1996-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 133.