http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-980011880-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1996-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-980011880-A |
| titleOfInvention | Method of forming metal wiring |
| abstract | The present invention relates to a method of forming a metal wiring, and it is difficult to control a critical dimension by generating a large amount of polymer, and a long term wet post-treatment for removing a polymer causes metal invasion, In order to solve the conventional problem that the corrosion characteristic is further deteriorated by the chlorine capture phenomenon, a metal wiring layer and a hard mask are deposited, and then a hard mask is etched. Then, a polymer is removed The metal wiring is then formed by etching the metal wiring layer, and then performing post-processing. Thus, the polymer is removed by the developing solution after etching the hard mask, so that the critical water number can be easily controlled in the subsequent metal wiring etching , The chlorine capture phenomenon by the polymer is reduced, and corrosion of the metal can be prevented.n n n Further, since a post-treatment is required for a short time after the metal wiring is etched, there is almost no metal invasion, and the succeeding insulating film to which it belongs can be completely deposited, thereby improving the reliability of the device. |
| priorityDate | 1996-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.