http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-980005790-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1996-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-980005790-A |
| titleOfInvention | Dry etching method to reduce damage of semiconductor devices |
| abstract | The present invention relates to a dry etching method for dry etching a predetermined material on a wafer in a dry etching apparatus of a high density plasma system for manufacturing a semiconductor device, Increasing the reliability of the gate oxide film and the capacitor insulating film by turning off the power by stepping down or continuously ramping down the etching equipment after the dry etching is finished or by combining stepwise down and continuous ramp down, The junction leakage current, the junction breakdown voltage, and the refresh time of the DRAM device are improved. |
| priorityDate | 1996-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 15.