http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-980005447-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate | 1996-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-980005447-A |
| titleOfInvention | Metal wiring of semiconductor device and method of forming the same |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metallization of a semiconductor device and a method of forming the semiconductor device, wherein an interlayer insulating film is formed on a conductive layer and a contact hole for exposing a contact portion of the conductive layer is formed by an etching process using a contact mask, and then the entire surface. In the method of forming a metal wiring of a semiconductor device for forming a metal barrier layer and a wet layer, respectively, and depositing an aluminum alloy, which is a metal wiring layer, silicon and copper are formed by flowing argon gas into a reactor to generate plasma and sputtering. The second aluminum alloy layer containing germanium is formed by continuously forming the first aluminum alloy layer containing PVD by injecting a germanium-containing material into the reactor and continuously performing the sputtering process. , First aluminum alloy layer and second aluminum alloy by CVD method using chemical reaction with germanium Forming a metal wiring layer with aluminum alloy in which germanium is a layered structure of layers is formed, prevents the generation of voids due to the step coverage ratio, and improves the EM characteristics of the germanium-alloyed aluminum alloy as the metal wiring layer. It is a technology to improve the reliability and thereby high integration of the semiconductor device. |
| priorityDate | 1996-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.