http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-980003884-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1996-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-980003884-A |
| titleOfInvention | Resist Pattern Formation Method |
| abstract | The present invention relates to a method for forming a resist pattern of a semiconductor device, comprising a nitride film ( ), A titanium oxide (TiN), a BPSG film or a surface of the lower layer where scum or footing is formed by oxidizing with oxygen plasma to form a thin oxide film, applying a chemically amplified resist, and then applying a resist pattern through an exposure and development process. By forming, it is possible to solve a problem in which footing, scum, and the like remain when forming a resist pattern. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030010324-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030062200-A |
| priorityDate | 1996-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.