http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-980003872-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1996-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-980003872-A |
| titleOfInvention | 3-layer photosensitive film shading method |
| abstract | The present invention relates to a lithography technique using an electron beam forming a photoresist pattern on a wafer during a semiconductor device manufacturing process. In particular, a three-layer photoresist film is prevented in order to prevent bending of the photoresist pattern due to electrocharging in a three-layer photoresist process. In the process, each layer is replaced with a conductive layer through which a current flows, or an additional layer of the conductive layer is applied to prevent the transfer charging from occurring, thereby solving the problem that the photosensitive layer pattern is bent or the overlapping accuracy of the pattern is deteriorated. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11333979-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100370135-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100376882-B1 |
| priorityDate | 1996-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.