http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970702586-A

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filingDate 1995-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1997-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-970702586-A
titleOfInvention MULTIPLELAYER THIN FILM SOLAR CELLS WITH BURIED CONTACTS
abstract The multilayer photovoltaic cell comprises a stack of alternating p-type and N-type semiconductor layers 10, 11, 12, 13, l4, and a plurality of rectifying photovoltaic junctions 15, 16, 17, 18 are formed therein. . Inexpensive cells are made from poor quality materials, and the materials are optimized using very high doping levels in the thin film layer. As a typical figure, the doping level is 10 17 atoms / cm 3 or more and the thickness of the doped layer is related to the carrier diffusion distance in the thickness direction. The contact is made by a buried contact structure consisting of grooves that pass down all the active layer and go down to the base layer. Each of the groove walls 33 and 34 is doped with n-type p-type impurities. The type of impurities depends on the type of layer to which each contact is connected. The grooves are partially or fully filled with metal contact materials 31 and 32.
priorityDate 1994-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 30.