http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970077244-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32183 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1996-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1997-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-970077244-A |
| titleOfInvention | Plasma forming apparatus and etching method of semiconductor device using the same |
| abstract | The present invention relates to a plasma forming method and an etching method of a semiconductor device using the same. In the etching process for manufacturing a semiconductor device, a high frequency current generated from a high frequency generator through a coil antenna formed around an etching chamber, A helicon and a plasma forming device are used to supply the direct current supplied by the supply means. According to the present invention, the configuration of the helicon plasma forming apparatus can be simplified by omitting the electromagnet in the configuration of the helicon plasma generating apparatus. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100440736-B1 |
| priorityDate | 1996-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID2244 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556224 |
Total number of triples: 18.