http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970072095-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1996-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1997-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-970072095-A |
| titleOfInvention | Method for forming bonding pads of semiconductor devices |
| abstract | The present invention discloses a method of forming a bonding pad for wire bonding in a manufacturing process of a semiconductor device. This method comprises the steps of: forming a metal interconnection for an aluminum-copper alloy bonding pad having a predetermined thickness on an insulating film, in which a predetermined interlayer insulating film is formed on a semiconductor substrate on which predetermined unit cells and wirings are formed; Forming a non-reusable metal film on the upper portion of the metal wiring to prevent reflection from the metal wiring during an exposure process for forming a pattern; Forming a first protective film having a predetermined thickness on the entire surface; Sequentially removing a protective film and an antireflection film on a predetermined portion of the metal wiring; Implanting silicon atoms at a predetermined concentration and implantation energy; Heat treating in a predetermined atmosphere; And forming a second protective film on the entire surface excluding the exposed metal wiring surface. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100790739-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030052809-A |
| priorityDate | 1996-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.