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filingDate 1996-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1997-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-970058391-A
titleOfInvention Plasma processing equipment
abstract A device for manufacturing a semiconductor device, and more particularly, a plasma surface treatment apparatus used in a dry etching process for treating a surface of a semiconductor material by physical or chemical reaction of activated particles in a gas phase in a gaseous phase, with low power consumption. In order to generate a highly uniform plasma over a wide range, and to enable high-selectivity and high-spectrum micromachining, electrons generated by electromagnetic waves and storage in the UHF band in a vacuum vessel containing a sample to be processed. The high density plasma is generated by using cyclotron resonance, and the plasma is etched using the plasma. UHF-to-electromagnetic waves for plasma generation are flat conductors composed of graphite or silicon disposed on the surface of the workpiece. The plate was made to radiate into the vacuum chamber space. By doing so, it is possible to form a high-density, low-resistance plasma, to improve the controllability of the etching reaction, and to activate active species effective for etching by reaction of the plasma with the surface of the flat-shaped conductor plate for reflecting electromagnetic waves. The effect of increasing is obtained.
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priorityDate 1995-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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