http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970054454-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 1995-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1997-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-970054454-A |
| titleOfInvention | Method of manufacturing transistor of semiconductor device |
| abstract | The present invention relates to a transistor manufacturing method of a semiconductor device, in order to minimize the width of the gate electrode to form a thick thermal oxide film on the silicon substrate of the junction region using the characteristic of the rapid growth rate of the oxide film in the silicon substrate of the junction region. do. In addition, the present invention relates to a method of fabricating a transistor of a semiconductor device in which the thickness of the gate electrode is less than or equal to the critical dimension of the photographic equipment by the thick thermal oxide film so that the integration and electrical characteristics of the device can be improved. |
| priorityDate | 1995-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.