http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970053557-A

Outgoing Links

Predicate Object
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 1995-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1997-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-970053557-A
titleOfInvention Manufacturing method of semiconductor device
abstract According to the present invention, after forming a via hole in which the SOG film is partially exposed, the metal heat treatment removes moisture in the SOG film and simultaneously forms a densified cured layer on the exposed surface of the SOG film.n n n Accordingly, the present invention forms a cured layer on the surface of the SOG film exposed on the sidewalls of the via holes, thereby suppressing moisture inflow into the SOG film, while preventing the release of moisture from the SOG film exposed on the sidewalls of the via holes when the metal film is deposited at a high temperature. By suppressing and improving the layer covering property of the metal film, the defect due to disconnection is reduced and the yield is increased, and the improvement of the layer covering property of disconnection due to the operation of the device is reduced, so that the defect due to disconnection is reduced and the yield is increased. By minimizing the possibility of disconnection, the reliability of the device can be increased, as well as the fabrication of more integrated devices can be realized.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100613334-B1
priorityDate 1995-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23964
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23978
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID418354341
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID425762086

Total number of triples: 19.