http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970053538-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5222 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1995-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1997-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-970053538-A |
| titleOfInvention | Multi-layer metallization structure and formation method of semiconductor device |
| abstract | The present invention is to provide a multi-layer metal wiring structure of the semiconductor device to minimize the coupling capacity between the upper and lower conductive lines in the semiconductor device having a multi-layer metal wiring.n n n In the multilayer metallization structure of the present invention for achieving the above object, in the multilayered metallization structure of a semiconductor device, the metallization structure is disposed between an upper layer and a lower layer, and an insulating layer is insulated between the upper and lower layers. And a cavity having a predetermined size for reducing the coupling capacity between the upper and lower metal wirings at a predetermined position of the.n n n Selectivity: third degree |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100426444-B1 |
| priorityDate | 1995-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3084099 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522015 |
Total number of triples: 15.