http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970053524-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1995-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1997-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-970053524-A |
| titleOfInvention | Metal wiring formation method of semiconductor device |
| abstract | The present invention discloses a method for forming metal wiring of a semiconductor device.n n n According to the present invention, when a large contact hole area and a small contact area coexist on one wafer, in order to improve the step coverage of the aluminum alloy layer in the small contact hole and to reduce the contact resistance, the large area and the small contact hole are used. The tungsten layer is etched by forming a tungsten layer on the wafer including the etch target so that the bottom surface of the contact hole having a large area is prevented from being etched.n n n Therefore, the present invention can perform the tungsten etch back process regardless of the area size of the contact hole formed in the wafer, thereby improving the contact resistance and increasing the yield of the device. |
| priorityDate | 1995-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.