http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970053520-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1995-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1997-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-970053520-A |
| titleOfInvention | Method for removing reactive product generated in dry etching process of semiconductor device and metal wiring formation method using same |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for removing reactive products generated during dry etching by ultrasonic cleaning in a semiconductor device manufacturing process, in particular, a semiconductor device manufacturing process to which multilayer metal wiring is applied, and a method for forming metal wiring using the same. After the dry etching of the insulating film is completed, the photoresist film is removed using oxygen plasma, and the wafer is placed in pure water (pure water: DI) to which ultrasonic waves are applied to clean the semiconductor device to prevent defects in the semiconductor device due to the remaining reactive products. It is possible to improve the stabilization and yield of semiconductor manufacturing. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100364073-B1 |
| priorityDate | 1995-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.