http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970053372-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1995-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1997-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-970053372-A |
| titleOfInvention | Device Separation Method of Semiconductor Device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device isolation film manufacturing method of a semiconductor device. The present invention relates to a device isolation film manufacturing method for forming grooves using a nitride film spacer during a LOCOS application process, wherein the pad oxide film and the first nitride film are formed on a semiconductor substrate. And a photosensitive film pattern for forming an amorphous silicon layer on top of the first nitride film, and forming an isolation region on the amorphous silicon layer, and using the photosensitive film pattern, an amorphous silicon pattern and a first Forming a nitride layer pattern and a pad oxide layer pattern, forming a second nitride layer on the entire surface of the structure, forming an etch spacer for the second nitride layer, etching the semiconductor substrate with the spacer as a mask to form a groove, Removing the amorphous silicon pattern and thermally oxidizing the semiconductor substrate at the groove to form an isolation layer; By removing the nitride film pattern, the spacer, and the pad oxide film pattern, the amorphous silicon layer acts as an etch barrier at the time of forming the nitride film pattern and the spacer, thereby preventing the occurrence of buzz and easily removing the polymer material. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100459693-B1 |
| priorityDate | 1995-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 9.