http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970053236-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate | 1995-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1997-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-970053236-A |
| titleOfInvention | Evaluation of Oxide Quality on Wafer Using Cu Decorating Method |
| abstract | A copper decoration apparatus, a copper decorating method, and a method for evaluating an oxide film formed on a wafer using the same are described. This is done by decorating Cu on the oxide defects on the wafer using a copper decoration device, removing the copper-decorated wafer from the decoration device, and then placing the copper (Cu) on the resulting wafer. Observing Cu) decoration state, isolating Cu-deposited oxide defects using FIB (Focus Ion Beam), TEM thin film produced using FIB on the resulting wafer It provides a method for evaluating the oxide film formed on the wafer, characterized in that it comprises the step of positioning. As a result, the process of patterning the gate of the capacitor required in the conventional evaluation method can be omitted, and the defect site of the oxide film can be distinguished on the wafer, so that the surface topography of the oxide film defect can be observed using FIB and TEM. There is. In addition, the oxide defect density can be calculated visually, providing the possibility of monitoring during the process. |
| priorityDate | 1995-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.