http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970052902-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 1995-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1997-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-970052902-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | The present invention relates to a method for manufacturing a semiconductor device, using an ozone-TEOS oxide film as an interlayer insulating film to insulate and planarize between upper and lower polysilicon layer patterns, but in-situ at a relatively high temperature to remove moisture in the film. Heat treatment) to prevent defects caused by moisture, and before the application of ozone-TEOS oxide film, the surface is treated with N 2 / NH 3 gas plasma or the silane-based plasma oxide film is deposited to Since the abnormal application is prevented, the process is simple, does not contain impurities, no separate diffusion barrier is required, and the shallow junction is not destroyed, thereby improving process yield and device operation reliability. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100432785-B1 |
| priorityDate | 1995-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.